深圳市金城微零件有限公司

产品型号:BSC123N08NS3G

封装:QFN-8 5*6/PG-TDSON-8

源漏极间雪崩电压V(br)dss(V):30

夹断电压VGS(V):±20

雪崩能量EAS(mJ):135

漏极电流Id(A):100

源漏极导通电阻rDS(on)(Ω):0.0025 @VGS = 10 V

开启电压VGS(TH)(V):2.2

功率PD(W):83

极间电容Ciss(PF):4600

通道极性:N通道

低频跨导gFS(s)：110

温度(℃): -55 ~150

描述:30V,100A N-channel OptiMOS Power-MOSFET

Features
? Fast switching MOSFET for SMPS
? Optimized technology for DC/DC converters
? Qualified according to JEDEC for target applications
? N-channel
? Logic level
? Excellent gate charge x RDS(on) product (FOM)
? Very low on-resistance RDS(on)
? Superior thermal resistance
? Avalanche rated
? Pb-free plating; RoHS compliant
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