深圳市金城微零件有限公司

ME90P03G,SOT-252,SMD/MOS,P场,-30V,-60A,0.0076Ω
AP40P03GH,SOT-252,AP/富鼎,SMD/MOS,P场,-30V,-30A,0.028Ω
AM50P03-09D,SOT-252,艾柏电子,SMD/MOS,P场,-30V,-61A,
AP40P03GH,SOT-252,AP/富鼎,SMD/MOS,P场,-30V,-30A,0.028Ω
AOD403,SOT-252,AO,SMD/MOS,P场,-30V,-85,7.6mΩ
CMD40P03,SOT-252,SMD/MOS, -30V, -30A,
AP4435GH,SOT-252,SMD/MOS,P场,-30V,-40A,0.02Ω
ME90P03G,SOT-252,SMD/MOS,P场,-30V,-60A,0.0076Ω

产品型号:ME90P03G 30V P-Channel Enhancement Mode MOSFET

概述:
The ME90P03 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package.
该ME90P03是P沟道逻辑增强模式功率场效应晶体管都采用高密度，DMOS沟道技术。这种高密度工艺特别是针对减少通态电阻。这些器件特别适用于低电压应用，如手机和笔记本电脑电源管理和其他电池供电电路中低侧开关和低线的功率损耗，需要在一个非常小外形表面贴装封装。

特点
 * RDS（ON）≦6.2mΩ@ VGS=-20V
 * RDS（ON）≦7.6mΩ@ VGS=-10V
 * 超高密度电池设计极低的RDS（ON）
 * 卓越的导通电阻和DC电流能力

应用
 * 便携式设备
 * 电池供电系统
 * DC / DC转换器
 * 负荷开关

封装:SOT-252

品牌：ME/松木

源漏极间雪崩电压V(br)dss(V):-30

夹断电压VGS(V):±20

漏极电流Id(A):-62

源漏极导通电阻rDS(on)(Ω):0.0076 @VGS = -10 V

开启电压VGS(TH)(V):-3

功率PD(W):38

输入电容Ciss(PF):4510 typ.

通道极性:P沟道

低频跨导gFS(s)：

单脉冲雪崩能量EAS(mJ):

导通延迟时间Td(on)(ns):60 typ.

上升时间Tr(ns):23 typ.

关断延迟时间Td(off)(ns):163 typ.

下降时间Tf(ns):42 typ.

温度(℃): -55 ~150

描述:ME90P03G,-30V,-60A,0.0076Ω P-沟道增强型场效应晶体管

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